- Low cost metallization process.
- Excellent bond strength −100 psi typical.
- Withstands temperature extremes - −65 °C to +850 °C.
- Passes Mil specifications for temperature cycling and shock.
- Hermeticity − leak rate <10—8cc helium/second.
- Permits registration of metallization patterns with good resolution using photolithographic techniques and mechanical masking.
- Process applicable to beryllia, barium titanate, ferrites, epoxies, mylar and other dielectrics.
The RTM process offers a reliable, yet simple and economical method to metallize dielectric (non-conductor) materials at room temperature. This metallizing process with nickel is specially suited for commercial alumina type ceramics. The process sequence in 5 basic operations is illustrated above.
Pretreatment of the ceramic material with Polimet lapping compound may be omitted if the ceramic material already shows surface roughness of at least 20 microinches, average. Surface lapping with Polimet compound will result in a uniform surface with a roughness of 25 microinches average.
The composition and formulation of A-B-C-D solutions used in RTM permit excellent control of the metallization process. The nickel deposit is found to be unstressed, highly conductive, and extremely adherent with strong bond strength exhibited from −60 °C to +850 °C. It has a hardness of at least 500 (vickers) as deposited. The adherent nickel deposit may be plated, soldered, brazed or welded.