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Pure Strip光刻胶除胶剂,Pure Strip;stabilized sulfuric acid-hydrogen peroxide compound

Pure Strip适用于剥离各种半导体、光掩模和IC光刻化合物中的其他有机化合物以及正性和负性光刻胶。
制造商品牌: 西格玛 Sigma-Aldrich
货号(SKU): 901268
增值税发票 √ 免费送货 √ 订货电话:010-68689484
¥1,301.17

说明

Pure Strip 适用于剥离各种半导体、光掩模和 IC 光刻化合物中的其他有机化合物以及正性和负性光刻胶。 由于 Pure Strip 的高纯度/低颗粒成分,可以实现高收率。
与其他酸性配方相比,Pure Strip 对暴露的金属表面(包括铝)的侵蚀可忽略不计、无残留漂洗和延长浴槽寿命(室温下至少五天)。 Pure Strip 即可使用,无需混合。

Pure Strip 可在室温或高温下使用。 较高的温度会增加活性,但会缩短浴槽寿命(60-80 °C 下 1 天)。 去除基材上的光刻胶并进行有效清洁,对铝的侵蚀最小(室温下约为 35 埃/分钟),对钛、钛钨、铜、硅化钽和 ITO 等其他金属和合金的侵蚀可忽略不计。

一般描述

Pure Strip is suitable for stripping both positive and negative photoresists in addition to other organic compounds in a variety of semiconductor, photomask, and IC photolithography compounds. High yields can be achieved due to the high purity/low particulate composition of Pure Strip.
Advantages Pure Strip include negligible attack on exposed metal surfaces, including aluminum, vs. other acidic formulations, residue-free rinsing, and extended bath life (minimum of five days at room temperature). Pure Strip is ready to use and requires no mixing.
 

应用

Pure Strip may be used at room temperature or at elevated temperature. Higher temperatures will increase the activity but decrease the bath life (1 day at 60-80 °C). Substrates are stripped of photoresist and cleaned effectively with minimal attack on aluminum (approximately 35 Angstroms/minute at room temperature) and negligible attack on other metals and alloys such as titanium, Ti-tungsten, copper, tantalum silicide, and ITO.
 
 

属性

质量水平

100

形式

liquid

 

安全信息

象形图

Corrosion

警示用语:

Danger

危险声明

危险分类

Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1A

储存分类代码

8B - Non-combustible, corrosive hazardous materials

WGK

WGK 3

商品规格
属性名称属性值
储存温度 Storage temp.常温阴凉避光
全球实时库存 Availability √美国St. Louis ≥ 99 | 欧洲Eur. ≥ 10 | 東京Tokyo ≥ 22 | 香港与北京 ≥ 32