该材料用作OFET器件的 n 型半导体。 它形成紧密堆积的二维柱状结构,从而形成高性能的 n 型 FET。
100
97%
powder or crystals
230-235 °C
N-type (mobility=1.83 cm2/V·s)
FC(F)(F)c1ccc(cc1)-c2ncc(s2)-c3cnc(s3)-c4ccc(cc4)C(F)(F)F
1S/C20H10F6N2S2/c21-19(22,23)13-5-1-11(2-6-13)17-27-9-15(29-17)16-10-28-18(30-16)12-3-7-14(8-4-12)20(24,25)26/h1-10H
YPPDUFZJMJWOLJ-UHFFFAOYSA-N
Danger
Acute Tox. 3 Oral - Eye Irrit. 2
6.1C - Combustible, acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
WGK 3