背栅OFET基板,Back-gated OFET Substrate;n-doped silicon wafer with 230 nm SiO2 gate-insulator, chips (diced)
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2-全氟癸基丙烯酸乙酯,2-(Perfluorodecyl)ethyl Acrylate
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美国杜邦树脂,DuPont Resin
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二硫化铁,Iron disulfide;powder, −325 mesh, 99.8% trace metals basis
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安伯莱特IRA-900氯型强碱性阴离子交换树脂,Amberlite™ IRA-900 chloride form;650-820 μm
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N,N-二甲基十四胺N-氧化物,N,N-Dimethyltetradecylamine N-oxide [TDAO];≥98.0% (NT)
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黄芪皂苷I,Astragaloside I;≥97% (HPLC)